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| SEMICONDUCTOR TECHNICAL DATA LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT A KTC5103D/L EPITAXIAL PLANAR NPN TRANSISTOR I J FEATURES High Power Dissipation : PC=1.3W(Ta=25 ) Complementary to KTA1385D/L Q C H P F F 2 3 L MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * PW 10ms, Duty Cycle 50% Ta=25 Tc=25 DC Pulse * ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 60 60 7 5 8 1 1.0 15 150 -55 150 UNIT V V V 1 DIM A B C D E F H I J K L M O P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 1.10 + 0.2 _ 2.70 + 0.2 _ 2.30 + 0.1 1.00 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.00 + 0.20 _ 0.50 + 0.10 _ 0.91+ 0.10 _ 0.90 + 0.1 _ 1.00 + 0.10 0.95 MAX B K E M D 1. BASE 2. COLLECTOR 3. EMITTER DPAK A A W A C I J B D O H G P F F L 1 2 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 0.2 5.0 + _ 1.10 + 0.2 _ 9.50 + 0.6 _ 2.30 + 0.1 _ 0.76 + 0.1 1.0 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 0.2 2.0 + _ 0.50 + 0.1 _ 1.0 + 0.1 0.90 MAX Q K 1. BASE 2. COLLECTOR 3. EMITTER E ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain * SYMBOL ICBO IEBO hFE(1) hFE(2) (Note) hFE(3) Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Turn On Time Switching Time Storage Time Fall Time * Pulse test : PW 50 S, * VCE(sat) VBE(sat) ton tstg tf IB1 IB2 IB1=-I B2 =0.2A DUTY CYCLE < 1% = I B2 IPAK TEST CONDITION VCB=50V, IE=0 VEB=7V, IC=0 VCE=1V, IC=0.1A VCE=1V, IC=2A VCE=2V, IC=5A IC=2A, IB=0.2A IC=2A, IB=0.2A OUTPUT 20sec 5 INPUT I B1 MIN. 60 160 50 - TYP. 0.1 0.9 0.2 1.1 0.2 MAX. 10 10 400 0.3 1.2 1 2.5 1 UNIT A A V V S VCC =10V Duty Cycle 2% Pulse O:160 320, Y:200 400. Note) hFE(2) Classification : 2003. 3. 27 Revision No : 3 1/3 KTC5103D/L Pc - Ta 25 POWER DISSIPATION P C (W) I C DERATING d T (%) 20 15 Tc =2 d T - TC 160 140 120 100 80 60 40 20 Di ssi pa 10 5 5 C tio S/b Lim ited nL im ite d Ta=25 C 0 0 50 100 150 200 250 0 0 25 50 75 100 125 150 175 200 AMBIENT TEMPERATURE Ta ( C) CASE TEMPERATURE Tc ( C) SAFE OPERATING AREA 10 COLLECTOR CURRENT I C (A) 5 3 COLLECTOR CURRENT I C (A) IC (Pulse) MAX. * I C MAX. REVERSE BIAS SAFE OPERATING AREA 10 1 0.5 0.3 10 mS * 20 0m Di S * ss i S/ pati b L on im Li ite m d ite d VCEO MAX. 2m S* 8 6 4 2 0.1 1 * SINGLE NONREPETITVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 3 5 10 30 50 100 0 20 40 60 VCEO (SUS) 80 100 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE V CE (V) I C - VCE 10 COLLECTOR CURRENT I C (A) 8 IB =1 50 10 I B= 0m h FE - I C 1k 500 300 100 50 30 10 5 3 1 0.01 DC CURRENT GAIN h FE mA A I B =80mA I B=60mA VCE =2V VCE =1V mA 6 4 2 I B=40mA mA I B =30 I B =20mA IB = 200 I B =10mA I B =0mA 0 0.4 0.8 1.2 1.6 2.0 0.03 0.1 0.3 1 3 10 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A) 2003. 3. 27 Revision No : 3 2/3 KTC5103D/L V BE(sat), V CE(sat) - I C 10 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 VCE(sat) VBE(sat) I C /I B =10 SATURATION VOLTAGE VBE(sat), VCE(sat) (V) 0.03 0.1 0.3 1 3 10 COLLECTOR CURRENT I C (A) 2003. 3. 27 Revision No : 3 3/3 |
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